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| SUD45P03-15 Siliconix P-Channel 30-V (D-S), 150_C MOSFET Product Summary VDS (V) -30 30 rDS(on) (W) 0.015 @ VGS = -10 V 0.024 @ VGS = -4.5 V ID (A)a "13 "8 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case w w .D w t a S a e h t e D VDS VGS ID IDM IS U 4 .c m o P-Channel MOSFET Symbol Limit -30 "20 "13 "8 "100 -13 70 Unit V TA = 25_C TA = 100_C A TC = 25_C TA = 25_C PD TJ, Tstg 4a -55 to 150 W _C Symbol RthJA RthJC Typical Maximum 30 Notes a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253--Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors w w w .D a aS t 1.8 ee h 4U t Unit _C/W om .c 1-51 SUD45P03-15 Siliconix Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 125_C VDS = -5 V, VGS = -10 V VDS = -5 V, VGS = -4.5 V VGS = -10 V, ID = -13 A Drain-Source On-State Resistanceb rDS(on) VGS = -10 V, ID = -13 A, TJ = 125_C VGS = -4.5 V, ID = -13 A Forward Transconductance b gfs VDS = -15 V, ID = -13 A 20 -50 -20 0.012 0.018 0.020 0.015 0.026 0.024 S W A -30 V -1.0 "100 -1 -50 nA mA Symbol Test Condition Min Typa Max Unit On-State On State Drain Currentb ID( ) D(on) Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -15 V, RL = 0.33 W ID ^ -45 A, VGEN = -10 V, RG = 2.4 W VDS = -15 V, VGS = -10 V, ID = -45 A VGS = 0 V, VDS = -25 V, F = 1 MHz 3200 800 280 50 14 6.2 13 10 50 20 20 20 100 40 ns 125 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = -45 A, VGS = 0 V IF = -45 A, di/dt = 100 A/ms 1.0 55 100 1.5 100 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253--Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-52 SUD45P03-15 Siliconix Typical Characteristics (25_C Unless Otherwise Noted) 100 VGS = 10, 9, 8 V 80 I D - Drain Current (A) 60 40 20 3V 0 2V 0 2 4 6 8 10 0 5V I D - Drain Current (A) Output Characteristics 7V 6V 80 Transfer Characteristics TC = -55_C 60 25_C 125_C 40 4V 20 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) 50 40 g fs - Transconductance (S) 30 20 10 0 VGS - Gate-to-Source Voltage (V) 0.05 0.04 VGS = 4.5 V 0.03 0.02 VGS = 10 V 0.01 0 Transconductance TC = -55_C 25_C rDS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 125_C 0 10 20 30 40 50 60 0 20 40 60 80 100 ID - Drain Current (A) 4500 3600 C - Capacitance (pF) 2700 1800 900 0 Crss Coss ID - Drain Current (A) 10 VGS - Gate-to-Source Voltage (V) 8 6 4 2 0 VDS = 15 V ID = 45 A Capacitance Gate Charge Ciss 0 5 10 15 20 25 30 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253--Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-53 SUD45P03-15 Siliconix Typical Characteristics (25_C Unless Otherwise Noted) 2.0 1.6 1.2 0.8 0.4 0 -50 -25 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 45 A I S - Source Current (A) Source-Drain Diode Forward Voltage rDS(on) - On-Resistance ( W ) (Normalized) TJ = 150_C TJ = 25_C 10 0 25 50 75 100 125 150 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Thermal Ratings 20 16 I D - Drain Current (A) 12 8 4 0 I D - Drain Current (A) Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 500 100 Limited by rDS(on) 10, 100 ms 10 1 ms 10 ms 1 TA = 25_C Single Pulse 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 100 ms 1s dc 0 25 50 75 100 125 150 TA - Ambient Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 30 Square Wave Pulse Duration (sec) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253--Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-54 |
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